A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier

Fully Integrated CMOS Power Amplifier

A fully integrated 2.45 GHz 0.25μm CMOS power amplifier

A fully integrated differential class-AB power amplifier has been designed in a 0.25um CMOS technology. It is intended for medium output power ranges such as Bluetooth class I, and has an operating frequency of 2.45GHz. By using two parallel output stages that can he switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output pow...

A Fully Integrated Dual-Band WLP CMOS Power Amplifier for 802.11n WLAN Applications

A fully integrated dual-band CMOS power amplifier (PA) is developed for 802.11n WLAN applications using wafer-level package (WLP) technology. This paper presents a detailed design for the optimal impedance of dual-band PA (2 GHz/5 GHz PA) output transformers with low loss, which is provided by using 2:2 and 2:1 output transformers for the 2 GHz PA and the 5 GHz PA, respectively. In addition, se...

A W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm

A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...

A 20 GHz fully-integrated power amplifier in a 0.13 μm CMOS process

Research Projects Agency, grant # DAAB07-02-1-L28. In large part because of their guidance, this project was interesting and challenging, enabling me to hone my technical proficiency in integrated circuits while here at Berkeley. My fellow graduate students have provided me with the best possible support for intellectual development and social interaction, particularly Through all the exhilarat...